Principal design engineer, VLSI Design Engineering

The Memory Technology Group is at the core of the Legacy Sandisk Engineering Organization. We are building a cutting edge 3D memory in our multiple billion dollars Fab. Our memory provides performance, power, and endurance at a lower cost but on quality. The Memory Technology organization is a strategic entity for the company, and we are growing. Our group functions as a start-up within Sandisk, and offers a creative, fast paced, entrepreneurial work environment where you’ll be at the center of Sandisk innovation.If you thrive in a fast-paced, dynamic environment, are looking to be a part of a team that is developing exciting new processes, and you are eager to take on new opportunities and challenges with a sense of urgency and enthusiasm, then this could be an exciting opportunity for you.ESSENTIAL DUTIES AND RESPONSIBILITIES: Architect and design circuits at transistor level and gate level for leading-edge 3D NAND flash memory focusing on high-speed datapath circuit design and page buffers. Perform block level and full chip circuit simulations to meet all  performance specifications.RTL design, synthesis, static timing analysis and verification in verilog for page buffer and data path control logics. Conduct silicon debugging and evaluation with micro-probing. Collaborate with characterization engineers to fully characterize silicon, and partner with other designers to develop solutions for silicon issues.Generate detailed technical reports and presentations.